Abstract
We have developed a variational formalism for the calculation of the binding energies of hydrogenic donors in the so-called ‘‘dielectric quantum wells,’’ where the dielectric constant of the barrier material is significantly smaller than that of the well material, in the presence of magnetic and electric fields applied along the growth axis. We derive an expression for the anisotropic electron–donor-ion interaction potential analytically by solving the Poisson equation in the layered geometry of quantum-well structures. Binding energies of the 1s and 2p states are then calculated using the Gaussian-type orbital expansion method. Effects of the applied electric field, magnetic field, and the interfacial dielectric-constant mismatch on the binding energies of donor states are studied in detail.
- Received 23 April 1993
DOI:https://doi.org/10.1103/PhysRevB.48.8061
©1993 American Physical Society