Abstract
We report detailed optical, electrical, and transport measurements on p-doped single-quantum-well infrared photodetectors. We find that the properties of these single p-type structures are substantially different from those of n-type single-well detectors.
- Received 20 April 1993
DOI:https://doi.org/10.1103/PhysRevB.48.7999
©1993 American Physical Society
