Pressure dependence of the diamagnetic susceptibility of a donor in low-dimensional semiconductor systems

The pressure dependence of the donor ionization energy (${\mathit{E}}_{\mathrm{ion}}$) and diamagnetic susceptibility (${\mathrm{\chi }}_{\mathrm{dia}}$) are calculated for quasi-two-dimensional (Q2D), quasi-one-dimensional (Q1D), and quasi-zero-dimensional (Q0D) semiconductor systems consisting of GaAs quantum wells with ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As barriers forming a superlattice system. The results we arrived at are as follows: ${\mathit{E}}_{\mathrm{ion}}$ increases with pressure for a given well width (L), for a given magnetic field (B), and for a given system (Q2D, Q1D, or Q0D); ${\mathit{E}}_{\mathrm{ion}}$ increases with magnetic field for a given L, for a given P, and for a given system; ${\mathrm{\chi }}_{\mathrm{dia}}$ decreases with an increase in pressure and ${\mathrm{\chi }}_{\mathrm{dia}}$ decreases when the spatial dimension of the system is reduced for a given L and P.