Intersubband transitions in a δ-doped semiconductor with an applied electric field: Exact solutions

Doyeol Ahn
Phys. Rev. B 48, 7981 – Published 15 September 1993
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Abstract

Intersubband optical absorption in a δ-doped semiconductor with an applied electric field is investigated theoretically with the intrasubband relaxations taken into account. Exact solutions of the Schrödinger equation for the ideal ssV-shaped potential well with the applied electric field are obtained analytically. It is predicted that wide range tuning of the intersubband absorption would be possible for a δ-doped semiconductor layer by controlling the amount of the planar doping. Calculated intersubband absorption spectra in a δ-doped semiconductor show redshifts with an applied electric field in contrast with intersubband electroabsorption in an ordinary quantum well, which shows blueshifts.

  • Received 2 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.7981

©1993 American Physical Society

Authors & Affiliations

Doyeol Ahn

  • GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-140, Republic of Korea

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Issue

Vol. 48, Iss. 11 — 15 September 1993

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