Magnetopolaron effect on shallow donors in GaAs

J.-P. Cheng, B. D. McCombe, J. M. Shi, F. M. Peeters, and J. T. Devreese
Phys. Rev. B 48, 7910 – Published 15 September 1993
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Abstract

Low-temperature experimental measurements and variational calculations of the transition energies of shallow donor (Si) impurities in bulk GaAs as a function of magnetic field throughout the resonant po- laron region are reported. Far-infrared photoconductivity spectra in magnetic fields up to 23.5 T show several anti-level-crossing processes at energies above the LO-phonon energy, clearly demonstrating the resonant interactions between GaAs LO phonons and impurity-bound electrons involving several excited impurity states. Very good agreement is obtained between experiment and calculated transition energies throughout the resonant region with the accepted value of the Fröhlich coupling constant (α=0.068). The effects of uncertainties in the measured values of the dielectric constants (thus the value of α) are studied in the calculation, and the implication of these results for similar studies in GaAs/AlxGa1xAs quantum wells is discussed.

  • Received 26 April 1993

DOI:https://doi.org/10.1103/PhysRevB.48.7910

©1993 American Physical Society

Authors & Affiliations

J.-P. Cheng and B. D. McCombe

  • Department of Physics and Astronomy, State University of New York at Buffalo, Buffalo, New York 14260

J. M. Shi, F. M. Peeters, and J. T. Devreese

  • Department of Physics, University of Antwerp (UIA), Universiteitsplein 1, B-2610 Antwerpen, Belgium

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Vol. 48, Iss. 11 — 15 September 1993

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