Abstract
We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/As quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.
- Received 7 June 1993
DOI:https://doi.org/10.1103/PhysRevB.48.5708
©1993 American Physical Society