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Femtosecond hole relaxation in n-type modulation-doped quantum wells

Akihisa Tomita, Jagdeep Shah, J. E. Cunningham, Stephen M. Goodnick, P. Lugli, and Shun L. Chuang
Phys. Rev. B 48, 5708(R) – Published 15 August 1993; Erratum Phys. Rev. B 52, 5445 (1995)
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Abstract

We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

  • Received 7 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.5708

©1993 American Physical Society

Erratum

Erratum: Femtosecond hole relaxation in n-type modulation-doped quantum wells [Phys. Rev. B 48, 5708 (1993)]

Akihisa Tomita, Jagdeep Shah, J. E. Cunningham, Stephen M. Goodnick, P. Lugli, and Shun L. Chuang
Phys. Rev. B 52, 5445 (1995)

Authors & Affiliations

Akihisa Tomita, Jagdeep Shah, and J. E. Cunningham

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

Stephen M. Goodnick

  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331

P. Lugli

  • University of Rome, Tor Vergata, Rome, Italy

Shun L. Chuang

  • Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801

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Issue

Vol. 48, Iss. 8 — 15 August 1993

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