Abstract
We report the observation of miniband formation in superlattices of As/GaAs, grown by molecular beam epitaxy, manifested in their piezomodulated-reflectivity spectra when studied as a function of well () and barrier () widths. The piezomodulated-reflectivity spectra reveal signatures of well separated optical transitions both at the Brillouin zone center and at the zone boundary extending to energies above the As barrier. The clarity and sharpness of the spectral features allow an unambiguous identification of experimental transition energies with those calculated using the full eight-band k⋅p envelope-function approximation solved with the finite-element method. With =25 Å [9 monolayers (ML)], =20 Å (7 ML), and x=0.34, the lowest energy transition at the miniband zone center and at the corresponding zone boundary are separated by 158 meV. With =74 Å (26 ML) and =45 Å (16 ML), the spectra correspond to quantum states in a multiple quantum well. Features associated with monolayer fluctuations in layer thickness are also observed.
- Received 9 November 1992
DOI:https://doi.org/10.1103/PhysRevB.48.5413
©1993 American Physical Society