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Fermi-edge singularities in InxGa1xAs and GaAs quantum wires

M. Fritze, A. V. Nurmikko, and P. Hawrylak
Phys. Rev. B 48, 4960(R) – Published 15 August 1993
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Abstract

Strong Fermi-edge singularities (FES) were observed in the magnetoluminescence spectra of InxGa1xAs quantum wires. The distinct shift of spectral weight and peaks at the Fermi energy are strongly temperature dependent, broadening and diminishing in intensity by T=30 K. The FES features shifted diamagnetically in applied magnetic fields, indicative of excitonlike bound states, while the rest of the electron gas was Landau quantized giving also a measure of the typical electronic wire widths of Lww≊500 Å. While the FES effects in the InxGa1xAs quantum wires are associated with spatially direct transitions, aided by hole localization, we have also observed related effects in GaAs, where a Schottky-gate bias is needed to induce the effect due to the dominantly spatially indirect nature of the transitions.

  • Received 30 April 1993

DOI:https://doi.org/10.1103/PhysRevB.48.4960

©1993 American Physical Society

Authors & Affiliations

M. Fritze and A. V. Nurmikko

  • Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912

P. Hawrylak

  • National Research Council, Ottawa, Canada K1A OR6

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Vol. 48, Iss. 7 — 15 August 1993

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