ac conductance of single-electron resonant-tunneling systems

T. Ivanov, D. Marvakov, V. Valtchinov, and L. T. Wille
Phys. Rev. B 48, 4679 – Published 15 August 1993
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Abstract

Resonant tunneling under ac bias through a semiconducting quantum dot is investigated. In the case of a single resonant level in the dot, we take into account the Coulomb repulsion between electrons with opposite spins. Using the irreducible Green’s-function method, the propagator of the electrons in the well is obtained for the case of zero dc bias. The equation for the average number of electrons in the potential well is solved self-consistently and the density of states for the electrons in the well is obtained for typical parameter values. The conductance and the energy losses of the two-barrier system are calculated in the linear-response formalism. The conductance curve exhibits a resonantlike behavior when the external frequency Ω equals the Coulomb repulsion energy Ec. Likewise, the energy-loss curve has a pronounced minimum at this frequency.

  • Received 9 April 1993

DOI:https://doi.org/10.1103/PhysRevB.48.4679

©1993 American Physical Society

Authors & Affiliations

T. Ivanov and D. Marvakov

  • Department of Physics, University of Sofia, 5 J. Baucher Boulevard, 1126 Sofia, Bulgaria

V. Valtchinov and L. T. Wille

  • Department of Physics, Florida Atlantic University, Boca Raton, Florida 33431-0991

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Issue

Vol. 48, Iss. 7 — 15 August 1993

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