Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/f noise

Luca Varani, Lino Reggiani, Vladimir Mitin, Carolyne M. Van Vliet, and Tilmann Kuhn
Phys. Rev. B 48, 4405 – Published 15 August 1993
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Abstract

We present a theoretical study of generation-recombination processes from shallow impurities which includes self-consistently the contribution of the impurity excited levels. Making use of an original Monte Carlo simulation which accounts for both the kinetic energy of the carrier and its potential energy near the impurity, we have solved the semiclassical Boltzmann equation to investigate the dynamics of generation-recombination processes on a kinetic level. Calculations performed for the case of p-type Si clearly evidence a nonexponential distribution of the microscopic times spent by the carriers in the impurity centers and in the conducting band. This in turn leads to the impossibility of a rigorous definition of a carrier lifetime and therefore to a possible source of high-frequency 1/f noise. The theory is found to compare favorably with available experiments.

  • Received 9 February 1993

DOI:https://doi.org/10.1103/PhysRevB.48.4405

©1993 American Physical Society

Authors & Affiliations

Luca Varani and Lino Reggiani

  • Dipartimento di Fisica ed Istituto Nazionale di Fisica della Materia, Università di Modena, Via Campi 213/A, 41100 Modena, Italy

Vladimir Mitin

  • Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202

Carolyne M. Van Vliet

  • Centre de Recherches Mathématiques, Université de Montréal, Montréal, Québec, Canada H3C 3J7

Tilmann Kuhn

  • Institut für Theoretische Physik, Universität Stuttgart, Pfaffenwaldring 57, 7000 Stuttgart 80, Germany

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Vol. 48, Iss. 7 — 15 August 1993

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