Coulomb oscillation amplitudes and semiconductor quantum-dot self-consistent level structure

We calculate conductance versus gate voltage for single-electron tunneling through a lateral semiconductor quantum dot in the Coulomb blockade regime using the calculated self-consistent electronic structure of the device. We show that variations in the level spacings result in an experimentally observed but previously unexplained envelope modulation of peak amplitudes. We present a formula for the activated component of peak conductance as a function of level spacings and tunneling coefficients.