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Many-body effects in the electromodulation spectra of modulation-doped quantum wells: Theory and experiment

Godfrey Gumbs, Danhong Huang, Yichun Yin, H. Qiang, D. Yan, Fred H. Pollak, and Thomas F. Noble
Phys. Rev. B 48, 18328(R) – Published 15 December 1993
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Abstract

We have performed a theoretical (first-principles) and experimental (contactless electroreflectance) investigation of the temperature dependence (17<T<351 K) of the electric-field-modulated interband transitions in a pseudomorphic Ga0.81Al0.19As/In0.20Ga0.80As/GaAs modulation-doped quantum well that contains a two-dimensional electron gas. We find that many-body effects are a factor at all temperatures although they are most pronounced for T<=152 K. Because of the derivativelike nature of our approach, both theoretical and experimental, the weak Fermi-edge transition is still visible up to at least 152 K, as a complement to the results of previous theoretical and experimental investigations.

  • Received 1 September 1993

DOI:https://doi.org/10.1103/PhysRevB.48.18328

©1993 American Physical Society

Authors & Affiliations

Godfrey Gumbs and Danhong Huang

  • Department of Physics and Astronomy, Hunter College, City University of New York, 695 Park Avenue, New York, New York 10021

Yichun Yin, H. Qiang, D. Yan, and Fred H. Pollak

  • Department of Physics, Brooklyn College, City University of New York, Brooklyn, New York 11210

Thomas F. Noble

  • Materials Science and Engineering Department, Johns Hopkins University, Baltimore, Maryland 21218

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Vol. 48, Iss. 24 — 15 December 1993

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