Abstract
Electron mobility in As quantum wells is calculated for well widths between 2 and 10 nm and for the temperatures of 4.2, 77, and 300 K. Effects of the finite barrier height, energy-band nonparabolicity, mode confinement, electron screening, and degeneracy have been taken into account. The calculated values are found to be close to the experimental results for a well width of 10 nm. Effects of the composition of the barrier layer are also discussed.
- Received 9 September 1993
DOI:https://doi.org/10.1103/PhysRevB.48.17960
©1993 American Physical Society