Exciton confinement in GaAs quantum barriers

F. Martelli; M. Capizzi; A. Frova; A. Polimeni; F. Sarto; M. R. Bruni; M. G. Simeone

doi:10.1103/PhysRevB.48.1643

Exciton confinement in GaAs quantum barriers

F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M. G. Simeone

Phys. Rev. B 48, 1643 – Published 15 July 1993

Abstract

We report the observation, in a III-V semiconductor quantum-well structure, of free excitons with wave function mainly confined inside the barrier material GaAs. The confined-exciton energy falls between the fundamental level of the bulk three-dimensional exciton and its continuum of states. The confinement-energy values, obtained by an ad hoc designed luminescence self-absorption spectroscopy method, are consistent with the barrier parameters.

Received 25 March 1993

DOI:https://doi.org/10.1103/PhysRevB.48.1643

Authors & Affiliations

F. Martelli

Fondazione Ugo Bordoni, via B. Castiglione 59, I-00142 Roma, Italy

M. Capizzi, A. Frova, A. Polimeni, and F. Sarto

Dipartimento di Fisica, Università di Roma ‘‘La Sapienza,’’ Piazzale Aldo Moro 2, I-00185 Roma, Italy

M. R. Bruni and M. G. Simeone

Istituto di Chimica dei Materiali del Consiglio Nazionale delle Ricerche, via Salaria Km. 29.5, Casella Postale No. 10, I-00016, Monterotondo Scalo, Italy

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Vol. 48, Iss. 3 — 15 July 1993

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Physical Review B

covering condensed matter and materials physics