Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner; B. Fluegel; H. Giessen; B. P. McGinnis; A. Paul; R. Binder; S. W. Koch; N. Peyghambarian; M. Grün; C. Klingshirn

doi:10.1103/PhysRevB.48.15472

Rapid Communication

Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, B. P. McGinnis, A. Paul, R. Binder, S. W. Koch, N. Peyghambarian, M. Grün, and C. Klingshirn

Phys. Rev. B 48, 15472(R) – Published 15 November 1993

Abstract

We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier–LO-phonon scattering.

Received 20 September 1993

DOI:https://doi.org/10.1103/PhysRevB.48.15472

Authors & Affiliations

K. Meissner, B. Fluegel, H. Giessen, B. P. McGinnis, A. Paul, R. Binder, S. W. Koch, and N. Peyghambarian

Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

M. Grün and C. Klingshirn

Fachbereich Physik, Universität Kaiserslautern, W-6750 Kaiserslautern, Germany

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Vol. 48, Iss. 20 — 15 November 1993

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