Confinement-enhanced biexciton binding energy in semiconductor quantum dots

K. I. Kang, A. D. Kepner, S. V. Gaponenko, S. W. Koch, Y. Z. Hu, and N. Peyghambarian
Phys. Rev. B 48, 15449 – Published 15 November 1993
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Abstract

Experimental observation of the ground-state biexciton transition in CdSxSe1x quantum dots in glass is presented in a three-beam experiment, involving a probe, a pump, and a saturating laser pulse. The observed quantum-dot biexciton ground state has a strongly enhanced binding energy compared to the bulk as theoretically predicted. The biexciton binding energy is measured as a function of quantum-dot size and the results are compared with calculations.

  • Received 19 July 1993

DOI:https://doi.org/10.1103/PhysRevB.48.15449

©1993 American Physical Society

Authors & Affiliations

K. I. Kang, A. D. Kepner, S. V. Gaponenko, S. W. Koch, Y. Z. Hu, and N. Peyghambarian

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

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Vol. 48, Iss. 20 — 15 November 1993

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