Self-consistent calculation of ionized impurity scattering in semiconductor quantum wires

We calculate the electron elastic mean free path due to ionized impurity scattering in semiconductor quantum wires, using a scheme in which the screened ionized impurity potential and the electron screening self-consistently determine each other. By using a short-range-scattering potential model, we obtain an exact solution of the self-energy within the self-consistent Born and ‘‘noncrossing’’ approximations. We find that, compared to the mean free path for the bare unscreened potential ${\mathit{l}}_{\mathrm{bare}}$, the calculated mean free path including self-consistent screening ${\mathit{l}}_{\mathrm{sc}}$ is substantially larger, going as ${\mathit{l}}_{\mathrm{sc}}$∼${\mathit{l}}_{\mathrm{bare}}$[ln(${\mathit{l}}_{\mathrm{bare}}$)${]}^2$ for large ${\mathit{l}}_{\mathrm{bare}}$.