Quantum-well states of InAs/AlSb resonant-tunneling diodes

Timothy B. Boykin, R. E. Carnahan, and R. J. Higgins
Phys. Rev. B 48, 14232 – Published 15 November 1993
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Abstract

We study transmission resonances associated with the n=1 quantum-well states of InAs/AlSb resonant-tunneling diodes using an empirical tight-binding model. We find that the transmission tends to be fairly sensitive to the wave vector in the plane of the interface, indicating that the usual expression for the tunneling current (which neglects this explicit dependence) is most likely not a good approximation. We show how this behavior is related to the E(k) relation for the InAs conduction band. Finally, we examine the envelope functions associated with the quasibound states, and discuss how their appearance relates to the orbitals of which they are composed.

  • Received 2 August 1993

DOI:https://doi.org/10.1103/PhysRevB.48.14232

©1993 American Physical Society

Authors & Affiliations

Timothy B. Boykin

  • Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, Alabama 35899

R. E. Carnahan and R. J. Higgins

  • School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332

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Vol. 48, Iss. 19 — 15 November 1993

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