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Long-wavelength LO-phonon generation during hot-electron cooling in polar semiconductors

K. Král and B. Hejda
Phys. Rev. B 48, 11461(R) – Published 15 October 1993
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Abstract

In a hot-electron system in polar semiconductors a new mechanism is studied theoretically for long-wavelength LO-phonon generation, based on the fusion of hot acoustic phonons. The anharmonic mechanism of the LO-phonon decay into pairs of acoustic phonons is considered together with the reverse process of the fusion of acoustic phonons into the LO ones. Corresponding kinetic equations for the electronic temperature and for the distribution functions of both kinds of phonons are solved numerically in GaAs and CdSe. The relation of the numerical results on the long-wavelength LO-phonon generation, to the recent experiments by Tsen et al. in ultrathin GaAs/AlAs multiple quantum wells is discussed.

  • Received 16 August 1993

DOI:https://doi.org/10.1103/PhysRevB.48.11461

©1993 American Physical Society

Authors & Affiliations

K. Král and B. Hejda

  • Institute of Physics, Czechoslovak Academy of Sciences, Na Slovance 2, 180 40 Praha 8, Czechoslovakia

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Vol. 48, Iss. 15 — 15 October 1993

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