Theory of transport in silicon quantum wires

G. D. Sanders, C. J. Stanton, and Y. C. Chang
Phys. Rev. B 48, 11067 – Published 15 October 1993
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Abstract

We calculate transport properties of both electrons and holes in an idealized silicon quantum wire in which scattering is dominated by deformation-potential acoustic-phonon scattering. The quantum-wire electronic states are obtained from an empirical tight-binding calculation while the confined phonon field is treated in a continuum model. Scattering rates within and between quantum-wire subbands are determined from Fermi’s golden rule. The method for calculating scattering rates is quite general; we can include any number of electronic and phonon subbands in our theory. To determine transport properties, we use a Monte Carlo approach.

  • Received 17 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.11067

©1993 American Physical Society

Authors & Affiliations

G. D. Sanders and C. J. Stanton

  • Department of Physics, University of Florida, Gainesville, Florida 32611

Y. C. Chang

  • Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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Vol. 48, Iss. 15 — 15 October 1993

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