Exciton quantization in symmetric and asymmetric quantum wells: Pseudo-two-dimensional behavior

Exciton quantization in a single quantum well of wide-gap II-VI semiconductors is studied as a function of sample thicknesses and electron and hole confinement potentials. The role of the asymmetric barriers in the exciton behavior is also discussed. A narrow range of thicknesses, where the exciton envelope function shows large asymmetric behavior, is pointed out. Oscillator-strength values of CdTe/${\mathrm{Cd}}_{\mathit{x}}$${\mathrm{Mn}}_{1\mathrm{-}\mathit{x}}$Te quantum wells, recently published in the literature, compare well with our calculations.