Optical absorption in semiconductor quantum dots: A tight-binding approach

Lavanya M. Ramaniah and Selvakumar V. Nair
Phys. Rev. B 47, 7132 – Published 15 March 1993
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Abstract

We present a tight-binding calculation of the interband optical transitions in semiconductor quantum dots (QD’s). The calculated optical-absorption spectra are in good agreement with the existing experimental spectra of CdS and CdSe QD’s. We establish a correspondence between the tight-binding (TB) energy levels and those calculated using the spherical multiband effective-mass approximation (EMA). Consequently, the comparatively stringent selection rules of the latter are applicable to a large extent. Thus we formulate a convenient and quantitatively accurate description of the optical absorption in QD’s in terms of the TB energy levels and multiband EMA quantum numbers.

  • Received 6 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.7132

©1993 American Physical Society

Authors & Affiliations

Lavanya M. Ramaniah

  • Theoretical Physics Division, Bhabha Atomic Research Centre, Bombay 400 085, India

Selvakumar V. Nair

  • Laser Programme, Centre for Advanced Technology, Indore 452 013, India

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Vol. 47, Iss. 12 — 15 March 1993

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