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Exciton scattering in quantum wells at low temperatures

D. Oberhauser, K.-H. Pantke, J. M. Hvam, G. Weimann, and C. Klingshirn
Phys. Rev. B 47, 6827(R) – Published 15 March 1993
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Abstract

The diffusion and the lifetime of excitons were determined via laser-induced gratings in high-quality GaAs/AlxGa1xAs multiple quantum wells. The diffusion is governed by the interaction of the excitons with the interface roughness and with acoustic phonons. The exciton scattering rate was compared with the dephasing rate observed in subsequently performed photon echo experiments. The influence of interface-roughness scattering on the dephasing was found to be weak and independent of temperature for this coherent process. The exciton-phonon coupling deduced from diffusion shows an excellent agreement with theory, whereas the dephasing rates determined in our work and former contributions were found to agree only roughly with theoretically calculated values.

  • Received 30 November 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6827

©1993 American Physical Society

Authors & Affiliations

D. Oberhauser

  • Fachbereich Physik, Universität Kaiserslautern, D-6750 Kaiserslautern, Federal Republic of Germany

K.-H. Pantke and J. M. Hvam

  • Fysisk Institut, Odense Universitet, DK-5230 Odense, Denmark

G. Weimann

  • Walter Schottky Institut, D-8046 Garching, Federal Republic of Germany

C. Klingshirn

  • Fachbereich Physik, Universität Kaiserslautern, D-6750 Kaiserslautern, Federal Republic of Germany

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Vol. 47, Iss. 11 — 15 March 1993

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