Strain-induced heavy-hole-to-light-hole energy splitting in (111)B pseudomorphic InyGa1yAs quantum wells

T. S. Moise, L. J. Guido, and R. C. Barker
Phys. Rev. B 47, 6758 – Published 15 March 1993
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Abstract

Experimental investigation of the energy-band structure of (111)B and (100) InyGa1yAs quantum wells demonstrates that the strain-induced heavy-hole to light-hole energy splitting is considerably larger for (111)B pseudomorphic layers than for otherwise identical (100) structures. In general, the measured energy splittings, for both orientations, agree well with a simple one-band envelope-function model that includes strain corrections. However, for (111)B InyGa1yAs quantum wells with y≥0.072, there is evidence of a smaller hydrostatic strain component than is predicted by theory.

  • Received 21 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6758

©1993 American Physical Society

Authors & Affiliations

T. S. Moise, L. J. Guido, and R. C. Barker

  • Center for Microelectronic Materials and Structures, Yale University, P.O. Box 2157, New Haven, Connecticut 06520

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Vol. 47, Iss. 11 — 15 March 1993

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