Band offsets and transitivity of In1xGaxAs/In1yAlyAs/InP heterostructures

J. Böhrer, A. Krost, T. Wolf, and D. Bimberg
Phys. Rev. B 47, 6439 – Published 15 March 1993
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Abstract

In1xGaxAs/In1yAlyAs quantum wells (QW’s) and In1yAlyAs layers slightly lattice mismatched to InP substrates are grown by metalorganic chemical-vapor deposition and studied by calorimetric absorption spectroscopy (CAS), photoluminescence (PL), double-crystal x-ray diffractometry (DXD), and Shubnikov–de Haas (SdH) measurements. The layer compositions and the strain are directly determined from DXD. The strain partly relaxes selection rules and forbidden transitions, which are more sensitive to the relative conduction-band discontinuities ΔEcEg than the allowed ones, appear in the CAS spectra of the QW’s. Comparing the energies of the transitions with detailed band-structure calculations the relative conduction-band discontinuity ΔEcEg is determined to be (72±4)% for In0.540Ga0.460As/In0.531Al0.469As. PL spectra of the type-II heterostructure In0.489Al0.511As/InP show apart from the band-gap emissions two spatially indirect transitions across the In1yAlyAs/InP interface at 1.240 eV (n=1) and at 1.271 eV (n=2). The conduction-band discontinuity is determined from the energies of these transitions and SdH experiments in conjunction with self-consistent band-structure calculations for lattice-matched In0.52Al0.48As to be ΔEc=252 meV or ΔEc=2.86ΔEg. From these results, the three conduction-band discontinuities In1xGaxAs/InP, InP/In1yAlyAs, and In1yAlyAs/In1xGaxAs are found to be transitive.

  • Received 12 June 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6439

©1993 American Physical Society

Authors & Affiliations

J. Böhrer, A. Krost, T. Wolf, and D. Bimberg

  • Technische Universität Berlin, Institut für Festkörperphysik I, Hardenbergstrasse 36, D-1000 Berlin 12, Federal Republic of Germany

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Vol. 47, Iss. 11 — 15 March 1993

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