Optical properties of thin, strained layers of GaAsxP1x grown on (111)-oriented GaP

M. Gerling, G. Paulsson, M.-E. Pistol, and L. Samuelson
Phys. Rev. B 47, 6408 – Published 15 March 1993
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Abstract

Thin, perfectly strained quantum wells of indirect band gap GaAsxP1x between GaP on (111)B-oriented substrates have been grown by metal-organic vapor phase epitaxy. The layers were characterized by low-temperature photoluminescence and by electroreflectance. The evolution of the transition energies of the X and Γ conduction-band minima to the valence-band maxima was investigated, as a function of arsenic concentration up to 36% arsenic and compared to a model that treats strain as well as quantum confinement effects. Since the samples are grown in the [111] direction, strain-induced piezoelectric fields are expected to be present. The influence of this field on the experimental transition energies is discussed. Evidence of the ionization of neutral donors by the piezoelectric field is presented. The layers are concluded to be type I. The photoluminescence emission is very similar to bulk GaAsxP1x and includes the M0x emission.

  • Received 17 July 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6408

©1993 American Physical Society

Authors & Affiliations

M. Gerling, G. Paulsson, M.-E. Pistol, and L. Samuelson

  • Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

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Vol. 47, Iss. 11 — 15 March 1993

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