Abstract
We present self-consistent calculations of the electronic structure of δ-doped quantum wells. The sensitivity of the energy levels to various parameters—including impurity concentration, impurity spread, well width, and temperature—is examined. The effect of the finite barrier thickness is also considered, in order to ascertain the degree of carrier transfer into the surrounding material as a function of well width, barrier thickness, and impurity concentration.
- Received 5 October 1992
DOI:https://doi.org/10.1103/PhysRevB.47.4790
©1993 American Physical Society