Anomaly in the in-plane polarization properties of (110)-oriented quantum wells under [110] uniaxial stress

Yasutomo Kajikawa
Phys. Rev. B 47, 3649 – Published 15 February 1993
PDFExport Citation

Abstract

The effects of uniaxial stress on the polarization properties of interband transitions are studied for (110) quantum wells under stress along the [110] axis. Within a multiband effective-mass approximation, an analytical method for calculating the hole energy levels as well as the optical transition matrix elements is presented. The calculated result for a (110) GaAs/Al0.3Ga0.7As quantum well shows anticrossing behavior between the first two hole subbands in the compression dependence of the energy levels. It is shown that the dipole transition between the first electron state and the first hole state is forbidden for [001]-polarized light at a critical stress just beyond the anticrossing region, while that between the first electron and the second hole state becomes a forbidden transition for [1¯10] polarization at a different critical stress just before the anticrossing.

  • Received 28 April 1992

DOI:https://doi.org/10.1103/PhysRevB.47.3649

©1993 American Physical Society

Authors & Affiliations

Yasutomo Kajikawa

  • Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 47, Iss. 7 — 15 February 1993

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×