Abstract
The D°-h impurity-related photoluminescence spectra of confined donors in GaAs-(Ga,Al)As quantum wells is theoretically investigated within the effective-mass approximation. The impurity wave functions and binding energies are evaluated via a variational procedure. Calculations are performed for different well widths, temperatures, and impurity doping profiles. Typical D°-h theoretical photoluminescence line shapes show peaked structures corresponding to on-center and on-edge donors in good agreement with experimental results.
- Received 6 May 1992
DOI:https://doi.org/10.1103/PhysRevB.47.2406
©1993 American Physical Society
