Measurement of the exciton binding energy in a narrow GaAs-AlxGa1xAs quantum well by photoluminescence excitation spectroscopy

D. W. Kim, Y. A. Leem, S. D. Yoo, D. H. Woo, D. H. Lee, and J. C. Woo
Phys. Rev. B 47, 2042 – Published 15 January 1993
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Abstract

The direct measurement of the free-exciton binding energy EB in a GaAs-Al0.25Ga0.75As single quantum well is presented as a function of the well width Lz. In the 20-K photoluminescence excitation spectra, 1s and 2s states of both heavy- (HH) and light-hole (LH) coupled excitons were detected, and EB was obtained from the separation of the two states. The EB for both HH and LH coupled excitons have their maximum around Lz=10 monolayers (ML), and EB of LH excitons is smaller than that of HH excitons for Lz≤14 ML. The trend of Lz dependence of EB agrees well with the theoretical prediction, which accounts for the finiteness of the barrier of a low-dimensionally confined electron and hole. However, the drastic increase of EB in the vicinity of the maximum, with the maximum value approximately four times the bulk value, is believed to be a transition to the two-dimensional exciton by the confinement of a quantum well.

  • Received 28 September 1992

DOI:https://doi.org/10.1103/PhysRevB.47.2042

©1993 American Physical Society

Authors & Affiliations

D. W. Kim, Y. A. Leem, S. D. Yoo, D. H. Woo, D. H. Lee, and J. C. Woo

  • Department of Physics, Seoul National University, Seoul 151-742, Korea

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Vol. 47, Iss. 4 — 15 January 1993

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