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Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells

P. Michler, A. Hangleiter, A. Moritz, V. Härle, and F. Scholz
Phys. Rev. B 47, 1671(R) – Published 15 January 1993
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Abstract

We have investigated the carrier dynamics in In0.53Ga0.47As/InP quantum wells with various well widths as a function of temperature and carrier density using time-resolved photoluminescence spectroscopy. At low temperatures (T<50 K), we find pure excitonic recombination. At elevated temperatures, two radiative recombination paths are present, and the proportion of free-carrier recombination to excitonic recombination increases as the temperature is raised. We observe a nonlinear increase of the radiative lifetime caused by thermal ionization of excitons. Exciton binding energies in the range between 9 and 15 meV and majority carrier concentrations of about 1.2×1010 cm2 are deduced from the ratio between the high and low injection lifetimes. The exciton binding energy increases with decreasing well thicknesses, in good agreement with theoretical predictions.

  • Received 24 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.1671

©1993 American Physical Society

Authors & Affiliations

P. Michler, A. Hangleiter, A. Moritz, V. Härle, and F. Scholz

  • 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Germany

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Vol. 47, Iss. 3 — 15 January 1993

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