Abstract
Carrier tunneling through (Cd,Zn)Te barriers of different thicknesses is investigated in CdTe/Cd,Zn)Te asymmetric double quantum wells by use of time-resolved photoluminescence and steady-state photoluminescence excitation experiments. The strong dependence of the observed tunneling times on the barrier thickness indicates a resonant tunneling behavior. The analysis of our results allows us to identify the importance of excitons rather than free-carrier states for the tunneling mechanism.
- Received 27 April 1993
DOI:https://doi.org/10.1103/PhysRevB.47.16643
©1993 American Physical Society
