Reduced carrier cooling and thermalization in semiconductor quantum wires

L. Rota, F. Rossi, S. M. Goodnick, P. Lugli, E. Molinari, and W. Porod
Phys. Rev. B 47, 1632 – Published 15 January 1993
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Abstract

By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser photoexcitation, we show that carrier cooling due to phonon emission and internal thermalization due to electron-electron interaction are significantly decreased with respect to bulk systems. This decreased thermalization is mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering.

  • Received 5 June 1992

DOI:https://doi.org/10.1103/PhysRevB.47.1632

©1993 American Physical Society

Authors & Affiliations

L. Rota and F. Rossi

  • Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 41100 Modena, Italy

S. M. Goodnick

  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331

P. Lugli

  • Dipartimento di Ingegneria Elettronica, II Università di Roma, Via E. Carnevale, 00173 Roma, Italy

E. Molinari

  • Istituto ‘‘O. Corbino,’’ Consiglio Nazionale delle Ricerche, Via Cassia 1216, 00189 Roma, Italy

W. Porod

  • Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, Indiana 46556

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Issue

Vol. 47, Iss. 3 — 15 January 1993

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