Abstract
For spatially indirect excitons in staggered-line-up single quantum wells, binding energies, Bohr radii, and oscillator strengths are calculated, taking into account finite barrier heights and image-charge effects. Numerical results are presented for a model case of particular fundamental importance. For AlAs/GaAs quantum wells, which are indirect in k space, we find binding energies up to 11 meV for the exciton and 5 meV for the exciton. However, no-phonon oscillator strengths fall below the direct exciton by five orders of magnitude. A comparison to experiment suggests that the exciton is lowest in energy.
- Received 16 February 1993
DOI:https://doi.org/10.1103/PhysRevB.47.15789
©1993 American Physical Society