Electronic structure of a shallow acceptor confined in a GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum well

The electronic structure of a shallow neutral acceptor and its bound exciton (BE) in GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum wells has been investigated by optical spectroscopy. The heavy-hole and light-hole acceptor ground states are both observed in photoluminescence excitation (PLE) spectra. This interpretation is supported by magnetic-field and polarization-dependent PLE experiments. The effective g value for the acceptor BE emission varies strongly with the degree of confinement. Several BE states are theoretically predicted and observed in PLE spectra with the J=5/2 state at lowest energy, as in bulk GaAs.