Transition energy between the 1s and 2${\mathit{p}}_{\pm }$ magnetoexciton states in type-II quantum-well structures

We have calculated binding energies of the 1s and 2${\mathit{p}}_{\pm }$ states of both the heavy-hole and the light-hole excitons in the GaAs-AlAs type-II quantum-well structures in the presence of a magnetic field applied along the growth axis, using a variational formalism that includes effects of finite potential barriers, discontinuous effective masses, and subband mixing. Good agreement is obtained between the calculated and recently measured values of the 1s→2${\mathit{p}}_{+}$ transition of a heavy-hole exciton in GaAs-AlAs type-II quantum-well structures [C. C. Hodge et al., Phys. Rev. B 41, 12 319 (1990)]. The 1s→2${\mathit{p}}_{\mathrm{-}}$ transition energy shows little dependence on the strength of the applied magnetic field. Binding energies of other excited states of magnetoexcitons can be calculated using this formalism.