Abstract
The existence of lateral-superlattice effects in narrow As/GaAs strained quantum wells grown on GaAs vicinal substrates is reported. The effects have been probed by photoluminescence excitation under magnetic field and compared to a theoretical model. Prior work indicates that strained epitaxial layers grown on vicinal surfaces may present a tilt angle between the substrate plane and the epilayer plane that depends on the lattice mismatch. This provokes strong lateral modulation of the potential induced by inhomogeneity of the built-in strain. Our results are consistent with strong lateral-superlattice effects.
- Received 2 October 1992
DOI:https://doi.org/10.1103/PhysRevB.47.13880
©1993 American Physical Society