Abstract
Disordered P- (P bulk and quantum-well epilayers, lattice matched to GaAs substrates misoriented from (100), have been studied by low-temperature photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The effects of excitonic weak localization are discussed by comparison between the PL and PLE data. Envelope-function fitting of the excitonic transitions observed in PLE has been used to determine a conduction-band discontinuity Δ of ∼0.67Δ, providing strong support for the value obtained by Liedenbaum et al. [Appl. Phys. Lett. 57, 2699 (1990)].
- Received 26 October 1992
DOI:https://doi.org/10.1103/PhysRevB.47.12598
©1993 American Physical Society