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Ultrafast optical evidence for resonant electron capture in quantum wells

M. R. X. Barros, P. C. Becker, D. Morris, B. Deveaud, A. Regreny, and F. Beisser
Phys. Rev. B 47, 10951(R) – Published 15 April 1993
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Abstract

The dynamics of carrier capture in GaAs quantum wells have been measured with femtosecond resolution using pump and probe experiments under resonant excitation conditions. The electron capture mechanism at room temperature shows a resonance with a time as short as 650 fs for a well thickness of 58 Å. This gives strong evidence for the importance of the quantum-mechanical LO-phonon-assisted capture mechanism predicted by theoretical calculations.

  • Received 22 February 1993

DOI:https://doi.org/10.1103/PhysRevB.47.10951

©1993 American Physical Society

Authors & Affiliations

M. R. X. Barros and P. C. Becker

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

D. Morris, B. Deveaud, and A. Regreny

  • France Telecom, Centre National d’Etudes des Telecommunications, 22301 Lannion, France

F. Beisser

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

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Vol. 47, Iss. 16 — 15 April 1993

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