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Intersubband relaxation of heavy-hole excitons in GaAs quantum wells

R. A. Höpfel, R. Rodrigues, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi, and S. M. Goodnick
Phys. Rev. B 47, 10943(R) – Published 15 April 1993
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Abstract

The temporal dynamics of an exciton in a higher quantum-well subband is observed. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130±20 ps, in agreement with theoretical estimations of intersubband scattering by acoustic-phonon emission. Consequences for intersubband lasers are substantial.

  • Received 25 February 1993

DOI:https://doi.org/10.1103/PhysRevB.47.10943

©1993 American Physical Society

Authors & Affiliations

R. A. Höpfel and R. Rodrigues

  • Institut für Experimentalphysik, Universität Innsbruck, A-6020 Innsbruck, Austria

Y. Iimura, T. Yasui, Y. Segawa, and Y. Aoyagi

  • Frontier Research Program, The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan

S. M. Goodnick

  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331-3211

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Vol. 47, Iss. 16 — 15 April 1993

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