Tunneling conductance between parallel two-dimensional electron systems

Lian Zheng and A. H. MacDonald
Phys. Rev. B 47, 10619 – Published 15 April 1993
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Abstract

We derive and evaluate expressions for the low-temperature dc equilibrium tunneling conductance between parallel two-dimensional electron systems. Our theory is based on a linear-response formalism and on impurity-averaged perturbation theory. The disorder broadening of features in the dependence of tunneling conductance on sheet densities and in-plane magnetic-field strengths is influenced both by the finite lifetime of electrons within the wells and by momentum-nonconserving tunneling events. Disorder vertex corrections are important only for weak in-plane magnetic fields and strong interwell impurity-potential correlations. We comment, on the basis of our results, on the possibility of using tunneling measurements to determine the lifetime of electrons in the quantum wells.

  • Received 21 October 1992

DOI:https://doi.org/10.1103/PhysRevB.47.10619

©1993 American Physical Society

Authors & Affiliations

Lian Zheng and A. H. MacDonald

  • Department of Physics, Indiana University, Bloomington, Indiana 47405

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Issue

Vol. 47, Iss. 16 — 15 April 1993

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