Strong self-trapping in semiconducting two-band systems

M. I. Klinger and S. N. Taraskin
Phys. Rev. B 47, 10235 – Published 15 April 1993
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Abstract

Strong electron self-trapping is investigated at an energy gain exceeding (or close to) an interband gap width. Interactions between states in self-trapping and ‘‘nonparent’’ bands are taken into account. These interactions lead to changes in the occupation of the state in question: singly occupied or unoccupied states become doubly occupied. The shape of the adiabatic potentials is investigated for different initial occupation of the self-trapping state. A standard single-well potential can be to be transformed to a double-well potential. The extra minimum describes a strongly hybridized practically doubly occupied self-trapped state. The single-particle self-trapping energy and pair-correlation energy appear to depend strongly on these effects. The value of the pair self-trapping correlation energy is shown to be limited to about half of the gap width.

  • Received 5 October 1992

DOI:https://doi.org/10.1103/PhysRevB.47.10235

©1993 American Physical Society

Authors & Affiliations

M. I. Klinger

  • A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

S. N. Taraskin

  • Moscow Engineering Physics Institute, 115409 Moscow, Russia

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Issue

Vol. 47, Iss. 16 — 15 April 1993

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