Particle localization and phonon sidebands in GaAs/AlxGa1xAs multiple quantum wells

I. Brener, M. Olszakier, E. Cohen, E. Ehrenfreund, Arza Ron, and L. Pfeiffer
Phys. Rev. B 46, 7927 – Published 15 September 1992
PDFExport Citation

Abstract

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

  • Received 9 March 1992

DOI:https://doi.org/10.1103/PhysRevB.46.7927

©1992 American Physical Society

Authors & Affiliations

I. Brener, M. Olszakier, E. Cohen, and E. Ehrenfreund

  • Solid State Institute and Physics Department, Technion, Haifa 32000, Israel

Arza Ron

  • Solid State Institute and Chemistry Department, Technion, Haifa 32000, Israel

L. Pfeiffer

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

References (Subscription Required)

Click to Expand
Issue

Vol. 46, Iss. 12 — 15 September 1992

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×