Abstract
We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/As multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.
- Received 9 March 1992
DOI:https://doi.org/10.1103/PhysRevB.46.7927
©1992 American Physical Society