Abstract
We present a study of the dependence of the hole-spin relaxation on the electron density in an n-modulation-doped 75-Å GaAs/As quantum well by using cw and time-resolved photoluminescence techniques, at low temperature. The electron concentration has been continuously varied from to . A slow hole-spin relaxation time has been found (≊1 ns). A polarization decrease has also been observed when the in-plane wave vector of the photocreated holes increases. Calculations are presented which qualitatively support the latter experimental findings.
- Received 20 July 1992
DOI:https://doi.org/10.1103/PhysRevB.46.7292
©1992 American Physical Society