Magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure

We study theoretically the magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure. Two numerical approaches, a variational and an expansion method, have been proposed to study the exciton ground state. The exciton binding energy has been found to increase with increasing applied magnetic field and with decreasing layer thicknesses of the GaSb, AlSb, and InAs materials. The strength of the applied magnetic field, along with quantum-well structure parameters, determines the condition under which the system undergoes transition from semiconductor to excitonic phase. The excited states of the magnetoexcitons have also been studied with the application of the expansion method.