Optical properties of CdTe/Cd1xZnxTe strained-layer single quantum wells

T. Li, H. J. Lozykowski, and John L. Reno
Phys. Rev. B 46, 6961 – Published 15 September 1992
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Abstract

The electronic states in a series of molecular-beam-epitaxy-grown CdTe/Cd0.79Zn0.21Te strained-layer single quantum wells have been studied both theoretically and experimentally. Calculations based on model solid theory and deformation-potential theory have shown that, at Zn concentration of 0.21 in the barriers, the band lineup is type I for heavy holes and type II for light holes. The confined states were calculated using the three-band envelope function model. Photoluminescence measurement at temperatures between 9 and 100 K indicates that the broadening mechanism is dominated by the polar optical phonon (longitudinal optical) interactions. The circularly polarized excitation spectra have shown predominant heavy-hole feature confirming that the band lineup is type I for heavy holes and type II for light holes. With well width between 25 and 75 Å, our study has shown that exciton binding energy decreases with decreasing well width.

  • Received 22 January 1992

DOI:https://doi.org/10.1103/PhysRevB.46.6961

©1992 American Physical Society

Authors & Affiliations

T. Li

  • Electrical and Computer Engineering Department, Ohio University, Athens, Ohio

H. J. Lozykowski

  • Electronic Technology Laboratory (WRDC/EL), Wright Research and Development Center, Wright-Patterson Air Force Base, Dayton, Ohio 45433

John L. Reno

  • Sandia National Laboratories, Albuquerque, New Mexico 87185

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Issue

Vol. 46, Iss. 11 — 15 September 1992

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