Effects of trapped states on spectra of four-wave mixing and differential transmission

Eiichi Hanamura
Phys. Rev. B 46, 4718 – Published 15 August 1992
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Abstract

Excitons are sometimes trapped at impurities in crystals and at defects on interfaces in the confined systems, such as quantum wells and microcrystallites embedded in a host matrix. We discuss these trapping effects on the third-order optical polarization under nearly resonant pumping of the exciton. First we predict an enhancement of χ(3)(Ω;Ω,-Ω,Ω) by a factor ΓnT/ΓTg multiplicatively on that enhanced by the large excitonic dipole moments. Here ΓnT and ΓTg are, respectively, the rate at which the exciton is trapped and the decay rate of the trapped electron into the ground state. In many cases, ΓnT is much larger than ΓTg so that a large enhancement of χ(3) is expected. Second, the four-wave mixing spectrum ‖χ(3)(2Ω1-Ω2;Ω1,-Ω2,Ω1)‖ under two beams Ω1 and Ω2 is shown to consist of three hierarchical structures as a function of Ω1-Ω2, i.e., the sharpest spike around Ω1-Ω2=0 with the linewidth ‖Ω1-Ω2‖=ΓTg, the steep shoulder with the center also at Ω1-Ω2=0 and the width Γn (the exciton decay rate), and the wide structure with the width Γng around Ω1=ω1s and Ω2=ω1s. Here Γng is the relaxation rate of the exciton polarization and ħω1s the lowest exciton energy. Third, the differential transmission spectrum is found to show the strong absorption saturation peak or the sharp induced absorption dip as a function of pump-probe detuning Ω2-Ω1, depending upon the pump frequency Ω1 relative to the exciton peak ω1s.

  • Received 25 February 1992

DOI:https://doi.org/10.1103/PhysRevB.46.4718

©1992 American Physical Society

Authors & Affiliations

Eiichi Hanamura

  • Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

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Issue

Vol. 46, Iss. 8 — 15 August 1992

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