Tight-binding density of electronic states of pregraphitic carbon

J.-C. Charlier, J.-P. Michenaud, and Ph. Lambin
Phys. Rev. B 46, 4540 – Published 15 August 1992
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Abstract

The density of states of pregraphitic (disordered) carbon has been investigated using a tight-binding description of the electronic structure. The tight-binding Hamiltonian has been diagonalized using the recursion method for different stackings of graphene layers. The density of states of π electrons in a disordered stacking usually called ‘‘turbostratic’’ graphite and the resulting behavior near the Fermi level are compared to the results obtained for the Bernal structure, for the rhombohedral structure, and for the simple hexagonal structure.

  • Received 21 January 1992

DOI:https://doi.org/10.1103/PhysRevB.46.4540

©1992 American Physical Society

Authors & Affiliations

J.-C. Charlier and J.-P. Michenaud

  • Laboratoire de Physico-Chimie et de Physique des Mate´riaux, Universite´ Catholique de Louvain, 1 Place Croix du Sud, B-1348 Louvain-La-Neuve, Belgium

Ph. Lambin

  • Institute for Studies in Interface Sciences (ISIS), Faculte´s Universitaires Notre-Dame de la Paix, 61 rue de Bruxelles, B-5000 Namur, Belgium

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Issue

Vol. 46, Iss. 8 — 15 August 1992

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