Valence subband structure of [100]-, [110]-, and [111]-grown GaAs-(Al,Ga)As quantum wells and the accuracy of the axial approximation

Z. Ikonic´; V. Milanovic´; D. Tjapkin

doi:10.1103/PhysRevB.46.4285

Valence subband structure of [100]-, [110]-, and [111]-grown GaAs-(Al,Ga)As quantum wells and the accuracy of the axial approximation

Z. Ikonic´, V. Milanovic´, and D. Tjapkin

Phys. Rev. B 46, 4285 – Published 15 August 1992

Abstract

Block diagonalization of 4×4 Luttinger Hamiltonians, to be applied for hole-state quantization in [100]-, [110]-, and [111]-grown semiconductor quantum wells, is discussed and the accuracy of the axial approximation is analyzed.

Received 20 April 1992

DOI:https://doi.org/10.1103/PhysRevB.46.4285

Authors & Affiliations

Z. Ikonic´

Faculty of Electrical Engineering, University of Belgrade, Bulevar Revolucije 73, Belgrade, Serbia, Yugoslavia

V. Milanovic´

Faculty of Electrical Engineering, University of Belgrade, Bulevar Revolucije 73, Belgrade, Serbia, Yugoslavia
High Technical Post Telegraph and Telephone School, Zdravka Čelara 16, 11000 Belgrade, Serbia, Yugoslavia

D. Tjapkin

Faculty of Electrical Engineering, University of Belgrade, Bulevar Revolucije 73, Belgrade, Serbia, Yugoslavia

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Vol. 46, Iss. 7 — 15 August 1992

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covering condensed matter and materials physics