Abstract
With the radioactive probe atom as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-γγ-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.
- Received 23 September 1991
DOI:https://doi.org/10.1103/PhysRevB.46.2172
©1992 American Physical Society